Smooth and vertical-sidewall InP etching using Cl2/N2 inductively coupled plasma
Identifieur interne : 00A746 ( Main/Repository ); précédent : 00A745; suivant : 00A747Smooth and vertical-sidewall InP etching using Cl2/N2 inductively coupled plasma
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Abstract
Inductively coupled plasma (ICP) operated in the reactive-ion etching mode is used for mesa etching of InP using Cl2/N2 chemistry with a Ni metal mask. Etch rates of approximately 140 nm/min with very smooth and vertical sidewalls are obtained at a dc bias of 120 V. The effects of temperature, gas flow, chamber pressure, ICP source power, and substrate bias power on etch rate are studied; sidewall profile and surface morphology will be discussed. © 2004 American Vacuum Society.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Smooth and vertical-sidewall InP etching using Cl<sub>2</sub>/N<sub>2</sub> inductively coupled plasma</title><author><name sortKey="Lin, Jie" uniqKey="Lin J">Jie Lin</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>University of Maryland, Baltimore County, 5200 Westland Boulevard, Baltimore, Maryland 21227</s1><sZ>1 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Maryland</region></placeName><wicri:cityArea>University of Maryland, Baltimore County, 5200 Westland Boulevard, Baltimore</wicri:cityArea></affiliation><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Bell Labs, Lucent Technologies, 600 Mountain Avenue, Murray Hill, New Jersey 07974</s1><sZ>1 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">New Jersey</region></placeName><wicri:cityArea>Bell Labs, Lucent Technologies, 600 Mountain Avenue, Murray Hill</wicri:cityArea></affiliation><affiliation wicri:level="2"><inist:fA14 i1="04"><s1>University of Maryland, Baltimore County, 5200 Westland Boulevard, Baltimore, Maryland 21227</s1></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Maryland</region></placeName><wicri:cityArea>University of Maryland, Baltimore County, 5200 Westland Boulevard, Baltimore</wicri:cityArea></affiliation></author><author><name sortKey="Leven, Andreas" uniqKey="Leven A">Andreas Leven</name><affiliation wicri:level="2"><inist:fA14 i1="03"><s1>Bell Labs, Lucent Technologies, 600 Mountain Avenue, Murray Hill, New Jersey 07974</s1><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">New Jersey</region></placeName><wicri:cityArea>Bell Labs, Lucent Technologies, 600 Mountain Avenue, Murray Hill</wicri:cityArea></affiliation></author><author><name sortKey="Weimann, N G" uniqKey="Weimann N">N. G. Weimann</name><affiliation wicri:level="2"><inist:fA14 i1="03"><s1>Bell Labs, Lucent Technologies, 600 Mountain Avenue, Murray Hill, New Jersey 07974</s1><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">New Jersey</region></placeName><wicri:cityArea>Bell Labs, Lucent Technologies, 600 Mountain Avenue, Murray Hill</wicri:cityArea></affiliation></author><author><name sortKey="Yang, Y" uniqKey="Yang Y">Y. Yang</name><affiliation wicri:level="2"><inist:fA14 i1="03"><s1>Bell Labs, Lucent Technologies, 600 Mountain Avenue, Murray Hill, New Jersey 07974</s1><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">New Jersey</region></placeName><wicri:cityArea>Bell Labs, Lucent Technologies, 600 Mountain Avenue, Murray Hill</wicri:cityArea></affiliation></author><author><name sortKey="Kopf, R F" uniqKey="Kopf R">R. F. Kopf</name><affiliation wicri:level="2"><inist:fA14 i1="03"><s1>Bell Labs, Lucent Technologies, 600 Mountain Avenue, Murray Hill, New Jersey 07974</s1><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">New Jersey</region></placeName><wicri:cityArea>Bell Labs, Lucent Technologies, 600 Mountain Avenue, Murray Hill</wicri:cityArea></affiliation></author><author><name sortKey="Reyes, R" uniqKey="Reyes R">R. Reyes</name><affiliation wicri:level="2"><inist:fA14 i1="03"><s1>Bell Labs, Lucent Technologies, 600 Mountain Avenue, Murray Hill, New Jersey 07974</s1><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">New Jersey</region></placeName><wicri:cityArea>Bell Labs, Lucent Technologies, 600 Mountain Avenue, Murray Hill</wicri:cityArea></affiliation></author><author><name sortKey="Chen, Y K" uniqKey="Chen Y">Y. K. Chen</name><affiliation wicri:level="2"><inist:fA14 i1="03"><s1>Bell Labs, Lucent Technologies, 600 Mountain Avenue, Murray Hill, New Jersey 07974</s1><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">New Jersey</region></placeName><wicri:cityArea>Bell Labs, Lucent Technologies, 600 Mountain Avenue, Murray Hill</wicri:cityArea></affiliation></author><author><name sortKey="Choa, Fow Sen" uniqKey="Choa F">Fow-Sen Choa</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>University of Maryland, Baltimore County, 5200 Westland Boulevard, Baltimore, Maryland 21227</s1><sZ>1 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Maryland</region></placeName><wicri:cityArea>University of Maryland, Baltimore County, 5200 Westland Boulevard, Baltimore</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">04-0157312</idno><date when="2004-03">2004-03</date><idno type="stanalyst">PASCAL 04-0157312 AIP</idno><idno type="RBID">Pascal:04-0157312</idno><idno type="wicri:Area/Main/Corpus">00BC04</idno><idno type="wicri:Area/Main/Repository">00A746</idno></publicationStmt><seriesStmt><idno type="ISSN">1071-1023</idno><title level="j" type="abbreviated">J. vac. sci. technol., B., Microelectron. nanometer struct. process. meas. phenom.</title><title level="j" type="main">Journal of vacuum science and technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Experimental study</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Masks</term><term>Nickel</term><term>Plasma assisted processing</term><term>Sputter etching</term><term>Surface morphology</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>8105E</term><term>8540H</term><term>5277B</term><term>Etude expérimentale</term><term>Gravure pulvérisation</term><term>Indium composé</term><term>Semiconducteur III-V</term><term>Masque</term><term>Nickel</term><term>Morphologie surface</term><term>Traitement par plasma</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Nickel</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Inductively coupled plasma (ICP) operated in the reactive-ion etching mode is used for mesa etching of InP using Cl<sub>2</sub>/N<sub>2</sub> chemistry with a Ni metal mask. Etch rates of approximately 140 nm/min with very smooth and vertical sidewalls are obtained at a dc bias of 120 V. The effects of temperature, gas flow, chamber pressure, ICP source power, and substrate bias power on etch rate are studied; sidewall profile and surface morphology will be discussed. © 2004 American Vacuum Society.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1071-1023</s0></fA01><fA02 i1="01"><s0>JVTBD9</s0></fA02><fA03 i2="1"><s0>J. vac. sci. technol., B., Microelectron. nanometer struct. process. meas. phenom.</s0></fA03><fA05><s2>22</s2></fA05><fA06><s2>2</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Smooth and vertical-sidewall InP etching using Cl<sub>2</sub>/N<sub>2</sub> inductively coupled plasma</s1></fA08><fA11 i1="01" i2="1"><s1>LIN (Jie)</s1></fA11><fA11 i1="02" i2="1"><s1>LEVEN (Andreas)</s1></fA11><fA11 i1="03" i2="1"><s1>WEIMANN (N. G.)</s1></fA11><fA11 i1="04" i2="1"><s1>YANG (Y.)</s1></fA11><fA11 i1="05" i2="1"><s1>KOPF (R. F.)</s1></fA11><fA11 i1="06" i2="1"><s1>REYES (R.)</s1></fA11><fA11 i1="07" i2="1"><s1>CHEN (Y. K.)</s1></fA11><fA11 i1="08" i2="1"><s1>CHOA (Fow-sen)</s1></fA11><fA14 i1="01"><s1>University of Maryland, Baltimore County, 5200 Westland Boulevard, Baltimore, Maryland 21227</s1><sZ>1 aut.</sZ><sZ>8 aut.</sZ></fA14><fA14 i1="02"><s1>Bell Labs, Lucent Technologies, 600 Mountain Avenue, Murray Hill, New Jersey 07974</s1><sZ>1 aut.</sZ></fA14><fA14 i1="03"><s1>Bell Labs, Lucent Technologies, 600 Mountain Avenue, Murray Hill, New Jersey 07974</s1><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></fA14><fA14 i1="04"><s1>University of Maryland, Baltimore County, 5200 Westland Boulevard, Baltimore, Maryland 21227</s1></fA14><fA20><s1>510-512</s1></fA20><fA21><s1>2004-03</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>11992 B</s2></fA43><fA44><s0>8100</s0><s1>© 2004 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>04-0157312</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of vacuum science and technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>Inductively coupled plasma (ICP) operated in the reactive-ion etching mode is used for mesa etching of InP using Cl<sub>2</sub>/N<sub>2</sub> chemistry with a Ni metal mask. Etch rates of approximately 140 nm/min with very smooth and vertical sidewalls are obtained at a dc bias of 120 V. The effects of temperature, gas flow, chamber pressure, ICP source power, and substrate bias power on etch rate are studied; sidewall profile and surface morphology will be discussed. © 2004 American Vacuum Society.</s0></fC01><fC02 i1="01" i2="3"><s0>001B80A05H</s0></fC02><fC02 i1="02" i2="X"><s0>001D03F17</s0></fC02><fC02 i1="03" i2="3"><s0>001B50B75R</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>8105E</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="02" i2="3" l="FRE"><s0>8540H</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="03" i2="3" l="FRE"><s0>5277B</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Etude expérimentale</s0></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Experimental study</s0></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Gravure pulvérisation</s0></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Sputter etching</s0></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Indium composé</s0></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Indium compounds</s0></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Semiconducteur III-V</s0></fC03><fC03 i1="07" i2="3" l="ENG"><s0>III-V semiconductors</s0></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Masque</s0></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Masks</s0></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Nickel</s0><s2>NC</s2></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Nickel</s0><s2>NC</s2></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Morphologie surface</s0></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Surface morphology</s0></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Traitement par plasma</s0></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Plasma assisted processing</s0></fC03><fN21><s1>096</s1></fN21><fN47 i1="01" i2="1"><s0>0413M000385</s0></fN47></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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